SI4936BDY-T1-GE3 - MOSFET 2N-CH 30V 6.9A 8-SOIC

Fabrikatzailea Taldea zenbakia
Barne Taldea zenbakia
fabrikatzailea
Azalpen laburra
MOSFET 2N-CH 30V 6.9A 8-SOIC
RoHS Status
Doinua libre / RoHS betetzen
Delivery Time
1-2 egun
Kopurua eskura
750325 Pieces
Erreferentzia Prezioa
USD 0.37392
Gure prezioa
- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

AX Semiconductor dute SI4936BDY-T1-GE3 stock saltzen da.
Aukera Ontziak eta denbora bidalketa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Ordainketa Aukerak:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

zehaztapenak SI4936BDY-T1-GE3

Kalitatea Bermatzeko : 365 egun bermerik
stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko
Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Taldea zenbakia : SI4936BDY-T1-GE3
fabrikatzailea : Vishay Siliconix
deskribapena : MOSFET 2N-CH 30V 6.9A 8-SOIC
Series : TrenchFET®
Taldearen egoera : Active
FET Mota : 2 N-Channel (Dual)
FET Ezaugarria : Logic Level Gate
Xukatu iturburuko tentsioa (Vdss) : 30V
Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 6.9A
Rds On (Max) @ Id, Vgs : 35 mOhm @ 5.9A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Ateko karga (Qg) (Max) @ Vgs : 15nC @ 10V
Sarrerako ahalmena (Ciss) (Max) @ Vds : 530pF @ 15V
Potentzia - Max : 2.8W
Eragiketa tenperatura : -55°C ~ 150°C (TJ)
Muntatzeko mota : Surface Mount
Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width)
Hornitzaileentzako gailu paketea : 8-SO
pisu : -
baldintza : Berria eta original
Erlazionatutako estekak : SI493 , SI4936BD

Dokumentuak SI4936BDY-T1-GE3

produktu erlazionatutako SI4936BDY-T1-GE3 Vishay Siliconix

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