TPH2R306NH,L1Q - MOSFET N CH 60V 60A SOP ADV

Fabrikatzailea Taldea zenbakia
Barne Taldea zenbakia
Azalpen laburra
MOSFET N CH 60V 60A SOP ADV
RoHS Status
Doinua libre / RoHS betetzen
Delivery Time
1-2 egun
Kopurua eskura
367030 Pieces
Erreferentzia Prezioa
USD 0.7644
Gure prezioa
- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

AX Semiconductor dute TPH2R306NH,L1Q stock saltzen da.
Aukera Ontziak eta denbora bidalketa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Ordainketa Aukerak:
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zehaztapenak TPH2R306NH,L1Q

Kalitatea Bermatzeko : 365 egun bermerik
stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko
Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Taldea zenbakia : TPH2R306NH,L1Q
fabrikatzailea : Toshiba Semiconductor and Storage
deskribapena : MOSFET N CH 60V 60A SOP ADV
Series : U-MOSVIII-H
Taldearen egoera : Active
FET Mota : N-Channel
Teknologia : MOSFET (Metal Oxide)
Xukatu iturburuko tentsioa (Vdss) : 60V
Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 60A (Tc)
Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6.5V, 10V
Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Ateko karga (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±20V
Sarrerako ahalmena (Ciss) (Max) @ Vds : 6100pF @ 30V
FET Ezaugarria : -
Potentzia xahutzea (Max) : 1.6W (Ta), 78W (Tc)
Eragiketa tenperatura : 150°C (TJ)
Muntatzeko mota : Surface Mount
Hornitzaileentzako gailu paketea : 8-SOP Advance (5x5)
Paketea / Kaxa : 8-PowerVDFN
pisu : -
baldintza : Berria eta original
Erlazionatutako estekak : TPH2 , TPH2R30

Dokumentuak TPH2R306NH,L1Q

produktu erlazionatutako TPH2R306NH,L1Q Toshiba Semiconductor and Storage

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