TJ50S06M3L(T6L1,NQ - MOSFET P-CH 60V 50A DPAK-3

Fabrikatzailea Taldea zenbakia
Barne Taldea zenbakia
Azalpen laburra
MOSFET P-CH 60V 50A DPAK-3
RoHS Status
Doinua libre / RoHS betetzen
Delivery Time
1-2 egun
Kopurua eskura
585970 Pieces
Erreferentzia Prezioa
USD 0.4788
Gure prezioa
- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

AX Semiconductor dute TJ50S06M3L(T6L1,NQ stock saltzen da.
Aukera Ontziak eta denbora bidalketa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Ordainketa Aukerak:
Paypal (Credit Card)
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zehaztapenak TJ50S06M3L(T6L1,NQ

Kalitatea Bermatzeko : 365 egun bermerik
stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko
Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Taldea zenbakia : TJ50S06M3L(T6L1,NQ
fabrikatzailea : Toshiba Semiconductor and Storage
deskribapena : MOSFET P-CH 60V 50A DPAK-3
Series : U-MOSVI
Taldearen egoera : Active
FET Mota : P-Channel
Teknologia : MOSFET (Metal Oxide)
Xukatu iturburuko tentsioa (Vdss) : 60V
Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 50A (Ta)
Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 13.8 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 3V @ 1mA
Ateko karga (Qg) (Max) @ Vgs : 124nC @ 10V
Vgs (Max) : +10V, -20V
Sarrerako ahalmena (Ciss) (Max) @ Vds : 6290pF @ 10V
FET Ezaugarria : -
Potentzia xahutzea (Max) : 90W (Tc)
Eragiketa tenperatura : 175°C (TJ)
Muntatzeko mota : Surface Mount
Hornitzaileentzako gailu paketea : DPAK+
Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63
pisu : -
baldintza : Berria eta original
Erlazionatutako estekak : TJ50S0 , TJ50S06M3

Dokumentuak TJ50S06M3L(T6L1,NQ

produktu erlazionatutako TJ50S06M3L(T6L1,NQ Toshiba Semiconductor and Storage

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