SIZ328DT-T1-GE3 - MOSFET DUAL N-CHAN 25V POWERPAIR

Fabrikatzailea Taldea zenbakia
Barne Taldea zenbakia
fabrikatzailea
Azalpen laburra
MOSFET DUAL N-CHAN 25V POWERPAIR
RoHS Status
Doinua libre / RoHS betetzen
Delivery Time
1-2 egun
Kopurua eskura
1149475 Pieces
Erreferentzia Prezioa
USD 0.24408
Gure prezioa
- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

AX Semiconductor dute SIZ328DT-T1-GE3 stock saltzen da.
Aukera Ontziak eta denbora bidalketa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Ordainketa Aukerak:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

zehaztapenak SIZ328DT-T1-GE3

Kalitatea Bermatzeko : 365 egun bermerik
stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko
Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Taldea zenbakia : SIZ328DT-T1-GE3
fabrikatzailea : Vishay Siliconix
deskribapena : MOSFET DUAL N-CHAN 25V POWERPAIR
Series : TrenchFET® Gen IV
Taldearen egoera : Active
FET Mota : 2 N-Channel (Dual)
FET Ezaugarria : Standard
Xukatu iturburuko tentsioa (Vdss) : 25V
Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs : 15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Ateko karga (Qg) (Max) @ Vgs : 6.9nC @ 10V, 11.3nC @ 10V
Sarrerako ahalmena (Ciss) (Max) @ Vds : 325pF @ 10V, 600pF @ 10V
Potentzia - Max : 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Eragiketa tenperatura : -55°C ~ 150°C (TJ)
Muntatzeko mota : Surface Mount
Paketea / Kaxa : 8-PowerWDFN
Hornitzaileentzako gailu paketea : 8-Power33 (3x3)
pisu : -
baldintza : Berria eta original
Erlazionatutako estekak : SIZ32 , SIZ328D

Dokumentuak SIZ328DT-T1-GE3

produktu erlazionatutako SIZ328DT-T1-GE3 Vishay Siliconix

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