APTML20UM18R010T1AG - MOSFET N-CH 200V 109A SP1

Fabrikatzailea Taldea zenbakia

APTML20UM18R010T1AG

Barne Taldea zenbakia

AX-APTML20UM18R010T1AG

fabrikatzailea

Microsemi Corporation

Azalpen laburra

MOSFET N-CH 200V 109A SP1

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

17856 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

AX Semiconductor dute APTML20UM18R010T1AG stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak APTML20UM18R010T1AG

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : APTML20UM18R010T1AG

fabrikatzailea : Microsemi Corporation

deskribapena : MOSFET N-CH 200V 109A SP1

Series : -

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 109A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 19 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 4V @ 2.5mA

Ateko karga (Qg) (Max) @ Vgs : -

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 9880pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 480W (Tc)

Eragiketa tenperatura : -40°C ~ 150°C (TJ)

Muntatzeko mota : Chassis Mount

Hornitzaileentzako gailu paketea : SP1

Paketea / Kaxa : SP1

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : APTML2 , APTML20UM

Dokumentuak APTML20UM18R010T1AG

Fitxak : APTML20UM18R010T1AG.pdf

produktu erlazionatutako APTML20UM18R010T1AG Microsemi Corporation

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