TJ80S04M3L(T6L1,NQ - MOSFET P-CH 40V 80A DPAK-3

Fabrikatzailea Taldea zenbakia

TJ80S04M3L(T6L1,NQ

Barne Taldea zenbakia

AX-TJ80S04M3L(T6L1,NQ

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

MOSFET P-CH 40V 80A DPAK-3

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

513845 Pieces

Erreferentzia Prezioa

~~USD 0.546~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

AX Semiconductor dute TJ80S04M3L(T6L1,NQ stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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zehaztapenak TJ80S04M3L(T6L1,NQ

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TJ80S04M3L(T6L1,NQ

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : MOSFET P-CH 40V 80A DPAK-3

Series : U-MOSVI

Taldearen egoera : Active

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 40V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 80A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 5.2 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 3V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 158nC @ 10V

Vgs (Max) : +10V, -20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 7770pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 100W (Tc)

Eragiketa tenperatura : 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : DPAK+

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TJ80S0 , TJ80S04M3

Dokumentuak TJ80S04M3L(T6L1,NQ

Fitxak : TJ80S04M3L(T6L1,NQ.pdf

produktu erlazionatutako TJ80S04M3L(T6L1,NQ Toshiba Semiconductor and Storage

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