K4F8E3S4HB-MHCJ - 8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production

Fabrikatzailea Taldea zenbakia
Barne Taldea zenbakia
fabrikatzailea
Azalpen laburra
8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
RoHS Status
Doinua libre / RoHS betetzen
Delivery Time
1-2 egun
Kopurua eskura
83735 Pieces
Erreferentzia Prezioa
USD 0
Gure prezioa
- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

AX Semiconductor dute K4F8E3S4HB-MHCJ stock saltzen da.
Aukera Ontziak eta denbora bidalketa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Ordainketa Aukerak:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

zehaztapenak K4F8E3S4HB-MHCJ

Kalitatea Bermatzeko : 365 egun bermerik
stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko
Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Taldea zenbakia : K4F8E3S4HB-MHCJ
fabrikatzailea : Samsung Semiconductor
deskribapena : 8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
Series : DDR3
dentsitatea : 8 Gb
Org. : x32
Abiadura : 3733 Mbps
Tentsioa : 1.8 / 1.1 / 1.1 V
Aldi baterako. : -40 ~ 105 °C
Package : 200FBGA
Produktuen Status : Mass Production
pisu : -
baldintza : Berria eta original
Erlazionatutako estekak : K4F8E , K4F8E3S

Dokumentuak K4F8E3S4HB-MHCJ

produktu erlazionatutako K4F8E3S4HB-MHCJ Samsung Semiconductor

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