TK31N60W,S1VF - MOSFET N CH 600V 30.8A TO247

Fabrikatzailea Taldea zenbakia
Barne Taldea zenbakia
Azalpen laburra
MOSFET N CH 600V 30.8A TO247
RoHS Status
Doinua libre / RoHS betetzen
Delivery Time
1-2 egun
Kopurua eskura
55335 Pieces
Erreferentzia Prezioa
USD 5.07
Gure prezioa
- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

AX Semiconductor dute TK31N60W,S1VF stock saltzen da.
Aukera Ontziak eta denbora bidalketa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Ordainketa Aukerak:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

zehaztapenak TK31N60W,S1VF

Kalitatea Bermatzeko : 365 egun bermerik
stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko
Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Taldea zenbakia : TK31N60W,S1VF
fabrikatzailea : Toshiba Semiconductor and Storage
deskribapena : MOSFET N CH 600V 30.8A TO247
Series : DTMOSIV
Taldearen egoera : Active
FET Mota : N-Channel
Teknologia : MOSFET (Metal Oxide)
Xukatu iturburuko tentsioa (Vdss) : 600V
Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 30.8A (Ta)
Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 88 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 1.5mA
Ateko karga (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±30V
Sarrerako ahalmena (Ciss) (Max) @ Vds : 3000pF @ 300V
FET Ezaugarria : Super Junction
Potentzia xahutzea (Max) : 230W (Tc)
Eragiketa tenperatura : 150°C (TJ)
Muntatzeko mota : Through Hole
Hornitzaileentzako gailu paketea : TO-247
Paketea / Kaxa : TO-247-3
pisu : -
baldintza : Berria eta original
Erlazionatutako estekak : TK31 , TK31N6

Dokumentuak TK31N60W,S1VF

produktu erlazionatutako TK31N60W,S1VF Toshiba Semiconductor and Storage

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